| 摘要 |
<p>The device (1) has an imaging section (5) receiving visible light reflected from a surface of a semiconductor wafer to obtain a reflection image of the wafer. Another imaging section (7) receives infrared light that passes through the wafer to obtain a transmission image of the wafer. A beam splitter is located between the two imaging sections to conduct blue light (4a) having wavelength that is less than predetermined wavelength to the former imaging section and to conduct green light (4b) having the wavelength greater than the predetermined wavelength to the latter imaging section.</p> |
