发明名称 VACUUM METALLIZING COATING FILM
摘要 The present invention relates to a multi-stage capacitor deposition film which is formed by overlapping two facing sheets in a pair and having metal material deposited thereon. A metallicon contact unit (10) is formed by a metal deposition process to be electrically connected with the metallicon of a capacitor on a widthwise end (1a) of a dielectric body (1). A margin unit (20) without the metal material deposited thereon is formed on the other widthwise end (1b) of the dielectric body (1). An operating area (A) is formed between the metallicon contact unit (10) and the margin unit (20) through metal deposition. The operating area (A) is formed in a multi-stage shape having the deposition thickness narrowing from the metallicon contact unit (10) to the margin unit (20).
申请公布号 KR101573247(B1) 申请公布日期 2015.12.02
申请号 KR20140150836 申请日期 2014.11.03
申请人 NUINTEK CO., LTD. 发明人 PARK, DEA JIN;JEON, YING WON;HAN, KI JU;PARK, JIN A
分类号 H01G4/33;H01G4/32 主分类号 H01G4/33
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