| 发明名称 |
TRANSPARENT COMPOUND SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR |
| 摘要 |
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba 1-X La X SnO 3 (0<x<0.1) and has a charge mobility of at least 10 cm 2 /V·sec. |
| 申请公布号 |
EP2835818(A4) |
申请公布日期 |
2015.12.02 |
| 申请号 |
EP20130772003 |
申请日期 |
2013.04.05 |
| 申请人 |
RFTRON CO. LTD. |
发明人 |
CHAR, KOOKRIN;IHM, JISOON |
| 分类号 |
H01L21/36;C23C14/08;H01L31/0224;H01L31/18 |
主分类号 |
H01L21/36 |
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