发明名称 |
SHARED MASKS FOR X-LINES AND SHARED MASKS FOR Y-LINES FOR FABRICATION OF 3D MEMORY ARRAYS |
摘要 |
A structure and a method of manufacturing a three dimensional memory using a number of bit line masks that is less than the number of device layers. A first bit line mask is used to form a first bit line layer in a first device level. The first bit line layer comprises first bit lines. The first bit line mask is also used to form a second bit line layer in a second device level. The second bit line layer comprises second bit lines. The first bit lines and the second bit lines have different electrical connections to a bit line connection level despite employing the same mask pattern. |
申请公布号 |
EP2335284(B1) |
申请公布日期 |
2015.12.02 |
申请号 |
EP20090792218 |
申请日期 |
2009.09.03 |
申请人 |
SANDISK 3D LLC |
发明人 |
SCHEUERLEIN, ROY, E. |
分类号 |
H01L27/02;H01L21/822;H01L27/06;H01L27/10 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|