发明名称 |
Semiconductor device including power-on reset circuit and operating method thereof |
摘要 |
A semiconductor device includes a power-on reset circuit configured to receive a power voltage and generate a power-on reset signal varying with a voltage level of the power voltage, an internal circuit configured to be initialized and operated in response to the power-on reset signal and generate a hold signal based on an operation mode of the internal circuit, and a reset protection circuit configured to deactivate the power-on reset circuit in response to the hold signal and provide a replacement signal for replacing the power-on reset signal to the internal circuit when the power-on reset circuit is deactivated. |
申请公布号 |
US9202530(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201313945721 |
申请日期 |
2013.07.18 |
申请人 |
SK HYNIX INC. |
发明人 |
Jang Chae Kyu |
分类号 |
H03L7/00;G11C5/14;H03K3/012;G11C7/20;H03K17/22 |
主分类号 |
H03L7/00 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. A method of operating a semiconductor memory device, the method comprising:
generating a power-on reset signal varying with a voltage level of a power voltage; providing the power-on reset signal to an internal circuit of the semiconductor memory device; performing an initializing operation of the internal circuit in response to the power-on reset signal; receiving a chip enable signal for selecting the semiconductor memory device from an external device to the internal circuit; entering a sleep mode of the internal circuit when the chip enable signal maintains a disable state for a predetermined time; generating a hold signal to be enabled when the internal circuit is in the sleep mode; deactivating a power-on reset circuit of the semiconductor memory device in response to the hold signal; and providing a replacement signal for replacing the power-on reset signal to the internal circuit when the power-on reset circuit is deactivated. |
地址 |
Icheon-Si, Gyeonggi-Do KR |