发明名称 AA' stacked graphite and fabrication method thereof
摘要 Disclosed is AA′ graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA′ where alternate graphene layers exhibiting the AA′ stacking are translated by a half hexagon (1.23 Å). AA′ graphite has an interplanar spacing of about 3.44 Å larger than that of the conventional AB stacked graphite (3.35 Å) that has been known as the only crystal of pure graphite. This may allow the AA′ stacked graphite to have unique physical and chemical characteristics.
申请公布号 US9200363(B2) 申请公布日期 2015.12.01
申请号 US200912512942 申请日期 2009.07.30
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 Lee Jae-Kap;Lee So-Hyung;Ahn Jae-Pyoung;Lee Seung-Cheol;Lee Wook-Seong
分类号 C01B31/04;C23C16/26;B82Y30/00 主分类号 C01B31/04
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A method to prepare AA′ stacked crystalline graphite which comprises a) heating non-crystalline carbon material at a temperature of 1,000° C. for an hour under an inert gas atmosphere; and b) increasing the temperature to 1,300° C. and maintaining said temperature for two hours.
地址 Seoul KR