氧化物半导体膜及半导体装置;OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

本文提出具有较稳定的导电性之氧化物半导体膜。此外，藉由使用该氧化物半导体膜来提供具有稳定电气特性及高可靠性之半导体装置。氧化物半导体膜包括结晶区域，且结晶区域包括其中a-b面与膜之一表面实质上平行且c轴与膜的该表面实质上垂直的晶体；氧化物半导体膜具有稳定导电性且相关于可见光、紫外线光、及之类的照射更电稳定。藉由使用这种氧化物半导体膜作为电晶体，可提供具有稳定电气特性之高度可靠的半导体装置。; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.