发明名称 Method for depositing a thin film, and resulting material
摘要 A method of obtaining a substrate coated on a first face with at least one transparent and electrically conductive thin layer based on at least one oxide, including depositing the at least one thin layer on the substrate and subjecting the at least one thin layer to a heat treatment in which the at least one layer is irradiated with aid of radiation having a wavelength between 500 and 2000 nm and focused on a zone of the at least one layer, at least one dimension of which does not exceed 10 cm. The radiation is delivered by at least one radiation device facing the at least one layer, a relative displacement being created between the radiation device and the substrate to treat the desired surface, the heat treatment being such that resistivity of the at least one layer is reduced during the treatment.
申请公布号 US9199874(B2) 申请公布日期 2015.12.01
申请号 US201013322995 申请日期 2010.06.04
申请人 SAINT-GOBAIN GLASS FRANCE 发明人 Peter Emmanuelle;Kharchenko Andriy;Nadaud Nicolas
分类号 C03C17/23;C03C17/245;C03C17/34;C03C17/36;C23C14/08;C23C14/58;H01L21/26;H01L31/0224 主分类号 C03C17/23
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method of obtaining a substrate coated on a first face with at least one transparent and electrically conductive thin layer based on at least one oxide, comprising: depositing the at least one thin layer on the substrate; subjecting the at least one thin layer to a heat treatment in which the at least one layer is irradiated with aid of radiation having a wavelength of between 700 nm and 1,300 nm, the radiation being delivered by at least one radiation device placed facing the at least one layer, said radiation device emitting a linear laser beam that simultaneously irradiates all of the width of the substrate, the emitted linear beam forming a laser beam line having a thickness between about 0.004 mm and about 1 mm and a length of at least 5 mm; and creating a relative displacement between the radiation device and the substrate so as to perform the heat treatment of the at least one thin layer, the heat treatment being such that resistivity of at least on layer is reduced during the heat treatment.
地址 Courbevoie FR