| 发明名称 | Topography simulation apparatus, topography simulation method and recording medium | ||
| 摘要 | In one embodiment, a topography simulation apparatus includes a division module configured to divide topography of a substance of a semiconductor device into first to n-th layers, where n is an integer of two or more. The apparatus further includes a flux calculation module configured to calculate, for each of the first to n-th layers, a flux of particles which reach a surface of the substance in each layer. The apparatus further includes a topography calculation module configured to calculate, for each of the first to n-th layers, an amount of change of the topography of the substance in each layer based on the flux. | ||
| 申请公布号 | US9201998(B1) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201414482502 | 申请日期 | 2014.09.10 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Tsuda Hirotaka;Takahashi Masanori |
| 分类号 | G06F17/50 | 主分类号 | G06F17/50 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
| 主权项 | 1. A topography simulation apparatus comprising: a division module configured to obtain data representing topography of a substance of a semiconductor device and to divide the topography of the substance in the data into first to n-th layers, where n is an integer of two or more; a flux calculation module configured to calculate, for each of the first to n-th layers, a flux of particles which reach a surface of the substance in each layer and contribute to processing of the topography of the substance; and a topography calculation module configured to calculate, for each of the first to n-th layers, an amount of change of the topography of the substance in each layer based on the flux, wherein the flux calculation module calculates the flux in a k-th layer based on the flux in a (k-1)-th layer adjacent to the k-th layer and a transmission probability of the particles in the k-th layer, where k is an integer from 2 to n. | ||
| 地址 | Tokyo JP | ||