发明名称 Methods and patterning devices for measuring phase aberration
摘要 A method of measuring a phase difference between two regions in an aberration function: Reference structures are produced on a substrate using illumination that minimizes effects of phase aberration. A grating is produced on the substrate using a phase-shift grating reticle to produce, in the exit pupil, a pair of diffracted non-zero orders, while forbidding other diffracted orders and produces interference fringes formed by interference between the pair. The interference contributes to a first grating on the substrate. Overlay error is measured between the grating and the reference structure using diffraction-based or image-based overlay measurements. A phase aberration function for the exit pupil of the lithographic apparatus can then be determined from the measured overlay errors.
申请公布号 US9201311(B2) 申请公布日期 2015.12.01
申请号 US201213533082 申请日期 2012.06.26
申请人 ASML Netherlands B.V. 发明人 Coene Willem Marie Julia Marcel;Van Haver Sven
分类号 G03F7/20;G01B15/04;G01B11/24;G03F1/26;G03F1/34 主分类号 G03F7/20
代理机构 Sterne, Kessler, Goldstein & Fox P.L.L.C. 代理人 Sterne, Kessler, Goldstein & Fox P.L.L.C.
主权项 1. A method comprising: producing, using a lithographic apparatus, a first reference structure on a substrate; producing, using the lithographic apparatus, a first grating on the substrate by illuminating a reticle with radiation, the reticle comprising an area with a phase-shift grating periodic in first and second directions and configured to produce: in an exit pupil of the lithographic apparatus, a pair of diffracted orders of the radiation other than the zeroth order, while forbidding other diffracted orders of the radiation in the exit pupil; andinterference fringes formed by interference between the pair of diffracted orders of the radiation, the interference fringes contributing to the definition of the first grating on the substrate; and measuring overlay error between the first grating and the first reference structure.
地址 Veldhoven NL