Non-volatile memory programming

摘要

Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying a signal to a line associated with a memory cell, the signal being generated based on digital information. The method can also include, while the signal is applied to the line, determining whether a state of the memory cell is near a target state when the digital information has a first value, and determining whether the state of the memory cell has reached the target state when the digital information has a second value. Other embodiments including additional memory devices and methods are described.

主权项

1. An apparatus comprising:
a memory cell; and a module to:
apply a signal to an access line associated with the memory cell, the signal being generated based on digital information;determine whether a threshold voltage value of the memory cell has reached a first voltage value when the digital information has a first value; anddetermine whether the threshold voltage value of memory cell has reached a second voltage value, after the threshold voltage value of the memory cell has reached the first voltage value, when the digital information has a second value.