发明名称 Double-sided LED and fabrication method thereof
摘要 A double-sided LED has a double-sided light emitting structure formed by electroplating or electrocasting without the need for wire bonding. The double-sided light emitting gives the chip a light-emitting angle of 150 degrees or higher. In addition, the device has good light extraction and heat dissipation characteristics.
申请公布号 US9202974(B2) 申请公布日期 2015.12.01
申请号 US201514712867 申请日期 2015.05.14
申请人 Xiamen Sanan Optoelectronics Technology Co., Ltd. 发明人 Huang Shaohua;Chao Chih-Wei
分类号 H01L33/08;H01L25/075;H01L33/00;H01L33/32;H01L33/36;H01L33/62 主分类号 H01L33/08
代理机构 Syncoda LLC 代理人 Syncoda LLC ;Ma Feng
主权项 1. A double-sided LED, comprising: a metal substrate including a first conduction region and a second conduction region; an insulating structure through the metal substrate and extending towards two sides of the metal substrate to separate the first conduction region and the second conduction region; a first light-emitting epitaxial laminated layer over a front surface of the metal substrate, comprising at least a first semiconductor layer and a second semiconductor layer from up to bottom forming a PN junction, wherein the first semiconductor layer is coupled to the first conduction region and the second semiconductor layer is coupled to the second conduction region; a second light-emitting epitaxial laminated layer over a back surface of the metal substrate, comprising at least a third semiconductor layer and a fourth semiconductor layer from bottom to up forming a PN junction, wherein the third semiconductor layer is coupled to the first conduction region and the fourth semiconductor layer is coupled to the second conduction region; a gapless junction formed between the first and second light-emitting epitaxial laminated layers and the metal substrate through the insulating structure; wherein the double-sided LED is configured such that if the first conduction region and the second conduction region are coupled to electricity, an electrical current flows substantially simultaneously into the first light-emitting epitaxial laminated layer and the second light-emitting epitaxial laminated layer, thereby realizing double-sided light emitting from the front and back surfaces of the metal substrate.
地址 Xiamen CN