发明名称 Sputtering target, transparent conductive film and transparent electrode
摘要 A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.
申请公布号 US9202603(B2) 申请公布日期 2015.12.01
申请号 US201213712024 申请日期 2012.12.12
申请人 Idemitsu Kosan Co., Ltd. 发明人 Yano Koki;Inoue Kazuyoshi;Tanaka Nobuo
分类号 H01B1/08;C23C14/08;C04B35/00;C04B35/453;C04B35/457;C04B35/626;C23C14/34 主分类号 H01B1/08
代理机构 Millen, White, Zelano & Branigan, P.C. 代理人 Millen, White, Zelano & Branigan, P.C.
主权项 1. A transparent conductive film, which is formed by sputtering a sputtering target comprising indium, tin, zinc and oxygen, and comprising a hexagonal layered compound represented by the formula of In2O3(ZnO)m, wherein m is 3, a spinel structure compound and a bixbyite structure compound, wherein in the sputtering target, the atomic ratio of In/(In+Sn+Zn) is in a range of 0.33 to 0.6 and the atomic ratio of Sn/(In+Sn+Zn) is in a range of 0.05 to 0.15, and wherein in X-ray diffraction, the maximum peak intensity I1 of the hexagonal layered compound, the maximum peak intensity I2 of the spinel structure compound, and the maximum peak intensity I3 of the bixbyite structure compound satisfy the following relationship: I1/I3 is in a range of 0.05 to 20; andI1/I2 is in a canoe of 0.05 to 20″.
地址 Tokyo JP