Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer

摘要

Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.

主权项

1. A method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate, the method comprising:
forming a hard mask layer over the insulator layer; performing a first patterning process to form a pole and yoke opening in the hard mask layer; performing a second patterning process comprising forming a photoresist pattern on the hard mask layer, the photoresist pattern exposing the rounded corners of the pole and yoke opening in the hard mask layer, and removing a portion of the hard mask layer exposed by the photoresist pattern to remove the rounded corners of the pole and yoke opening in the hard mask layer; removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer; and filling the trench with a magnetic material.