发明名称 Pad structure of a semiconductor device, method of manufacturing the pad structure and semiconductor package including the pad structure
摘要 A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion- to provide high roughness and firm connection.
申请公布号 US9202794(B2) 申请公布日期 2015.12.01
申请号 US201313803429 申请日期 2013.03.14
申请人 Samsung Electronics Co., Ltd. 发明人 Baek Nam-Gyu;Lee Young-Min
分类号 H01L23/48;H01L23/52;H01L29/40;H01L23/00;H01L23/31 主分类号 H01L23/48
代理机构 EIPG, PLLC 代理人 EIPG, PLLC
主权项 1. A pad structure of a semiconductor device, the pad structure comprising: an insulating layer pattern structure having a plug hole and at least one via hole; a plug formed in the plug hole; and a pad formed on the insulating layer pattern structure and on the plug, such that the pad is directly connected to the plug, wherein the pad includes a first surface having a protruded portion filling the via hole and a second surface opposite to the first surface, the second surface having a recessed portion and an elevated portion corresponding to a location of the protruded portion.
地址 Suwon-si KR