Semiconductor device for ESD protection

摘要

A semiconductor device for electrostatic discharge protection includes a substrate, a first well and a second well formed in the substrate. The first and second wells are formed side by side, meeting at an interface, and have a first conductivity type and a second conductivity type, respectively. A first heavily doped region and a second heavily-doped region are formed in the first well. A third heavily doped region and a fourth heavily-doped region are formed in the second well. The first, second, third, and fourth heavily-doped regions have the first, second, second, and first conductivity types, respectively. Positions of the first and second heavily-doped regions are staggered along a direction parallel to the interface.

主权项

1. A semiconductor device for electrostatic discharge protection, comprising:
a substrate; a first well formed in the substrate, the first well having a first conductivity type; a second well formed in the substrate, the second well having a second conductivity type different than the first conductivity type, the first and second wells being formed side by side and meeting at an interface; a first heavily-doped region having the first conductivity type and formed in the first well, the first heavily-doped region being positioned at a first distance from the interface; a second heavily-doped region having the second conductivity type and formed in the first well, the second heavily-doped region being positioned at a second distance from the interface; a third heavily-doped region having the second conductivity and formed in the second well, the third heavily-doped region being positioned at a third distance from the interface; and a fourth heavily-doped region having the first conductivity type and formed in the second well, the fourth heavily-doped region being positioned at a fourth distance from the interface, and the fourth distance being different from the third distance, wherein positions of the first and second heavily-doped regions are staggered along a direction parallel to the interface.