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发明名称
半导体结构及其制造方法;SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要
在此提供一种半导体结构及其制造方法。所述半导体结构包括一导电层、一导孔、以及设置在导电层与导孔之间的一阻障层。阻障层系填塞有氧。
申请公布号
TW201545300
申请公布日期
2015.12.01
申请号
TW103118907
申请日期
2014.05.30
申请人
旺宏电子股份有限公司 MACRONIX INTERNATIONAL CO., LTD.
发明人
余秉隆 YU, BING LUNG;叶金瓒 YEH, CHIN TSAN;洪永泰 HUNG, YUNG TAI;苏金达 SU, CHIN TA
分类号
H01L23/52(2006.01);H01L21/768(2006.01)
主分类号
H01L23/52(2006.01)
代理机构
代理人
祁明辉林素华
主权项
地址
新竹县科学工业园区力行路16号 TW
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