Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

摘要

A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.

主权项

1. A semiconductor device, comprising:
a first semiconductor material of a first conductivity type; a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween; a first oxide layer disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed; a polysilicon layer disposed on and in contact with the exposed portion of the second semiconductor material and a portion of the first oxide layer; a first conductive layer disposed on the polysilicon layer; and a second conductive layer disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.