Methods of forming stressed layers on FinFET semiconductor devices and the resulting devices

摘要

One method includes forming a raised isolation structure with a recess above a substrate, forming a gate structure above the fin, forming a plurality of spaced-apart buried fin contact structures within the recess and forming a stress-inducing material layer above the buried fin contact structures. One device includes a plurality of spaced-apart buried fin contact structures positioned within a recess in a raised isolation structure on opposite sides of a gate structure, a stress-inducing material layer formed above the buried fin contact structures and a source/drain contact that extends through the stress-inducing material layer.

主权项

1. A method of forming a FinFET transistor above a semiconductor substrate, said transistor comprising at least one fin and a plurality of source/drain regions, wherein the method comprises:
performing at least one etching process so as to define said at least one fin in said substrate; after defining said at least one fin in said substrate, forming a raised isolation structure with a recess formed therein above said substrate, wherein said recess has a bottom surface that is positioned below an upper surface of said raised isolation structure and an interior perimeter surface, and wherein said bottom surface of said recess exposes at least a portion of said at least one fin; after forming said raised isolation structure above said substrate, forming a gate structure above said at least one fin; forming a stress-inducing material layer above said plurality of source/drain regions of said device, said raised isolation structure and said gate structure; forming at least one layer of insulating material above said stress-inducing material layer; and forming a plurality of post-type source/drain contact structures that extend through said at least one layer of insulating material and through said stress-inducing material layer, wherein each of said post-type source/drain contact structures is conductively coupled to said at least one fin.