| 发明名称 | Semiconductor element and solid-state imaging device | ||
| 摘要 | A semiconductor element encompasses a charge-transfer path defined in a semiconductor region (34.35), configured to transfer signal charges, (b) a pair of first field-control electrodes (42a, 42b) laminated via an insulating film on the semiconductor region so as to sandwich the charge-transfer path in between, and a pair of second field-control electrodes (43a, 43b) arranged separately from and adjacently to the first field-control electrodes (42a, 42b). By applying field-control voltages differing from each other, to the first and second field-control electrodes (43a, 43b), a depleted potential in the charge-transfer path is changed, and a movement of the signal charges transferring in the semiconductor region is controlled. Because electric field can be made constant over a long distance along the charge-transfer direction, a semiconductor element and a solid-state imaging device, in which problems caused by interface defects and the like are avoided, can be provided. | ||
| 申请公布号 | US9202902(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201314419341 | 申请日期 | 2013.08.01 |
| 申请人 | National University Corporation Shizuoka University | 发明人 | Kawahito Shoji |
| 分类号 | H01L27/00;H01L29/768;H01L27/148;H01L27/146;H04N5/369;H04N5/372;H04N5/374 | 主分类号 | H01L27/00 |
| 代理机构 | NDQ&M Watchstone LLP | 代理人 | NDQ&M Watchstone LLP |
| 主权项 | 1. A semiconductor element, comprising: a charge-transfer path defined in a semiconductor region, configured to transfer signal charges; a pair of first field-control electrodes laminated via an insulating film on the semiconductor region so as to sandwich the charge-transfer path in between, in a planar pattern, along a direction orthogonal to a transfer direction of the signal charges, and a pair of second field-control electrodes arranged separately from and adjacently to the first field-control electrodes, respectively, along the transfer direction, and laminated via the insulating film on the semiconductor region, so as to sandwich the charge-transfer path in between, in the planar pattern, along the direction orthogonal to the transfer direction, wherein field-control voltages, which differ from each other, are applied to the first and second field-control electrodes, and a depleted potential in the charge-transfer path is changed, thereby controlling a movement of the signal charges transferring in the semiconductor region. | ||
| 地址 | Shizuoka JP | ||