Imaging element and camera system employing a high-concentration layer between a photodiode and an insulation layer, with the insulation layer being between the high-concentration layer and a well of an amplifying transistor

摘要

An imaging element includes an amplifying transistor. A signal charge from the photodiode is transferable to the gate of amplifying transistor, the photodiode being within a semiconductor substrate. The source and drain of the amplifying transistor are electrically isolated from a semiconductor substrate, wherein the source is within a well or the source and drain are within a silicon-on-insulator layer.

主权项

1. An imaging element comprising:
a photodiode extending into a first well region from a surface of a semiconductor substrate, said photodiode being between a floating diffusion region and a buried insulation film; an amplifying transistor drain extending into a second well region from said surface of the semiconductor substrate, said buried insulation film being adjacent to said second well region; an amplifying transistor source extending into said second well region from said surface of the semiconductor substrate, an amplifying transistor channel region being between said amplifying transistor drain and said amplifying transistor source; an amplifying transistor gate electrode directly electrically connected to said floating diffusion region, said surface of the semiconductor substrate being between said amplifying transistor channel region and said amplifying transistor gate electrode.