Three-dimensional semiconductor memory devices and methods of fabricating the same

摘要

A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.

主权项

1. A three-dimensional (3D) semiconductor memory device comprising:
a stack structure including a plurality of first patterns and a plurality of second patterns which are stacked alternately and vertically on a substrate, the stack structure including a plurality of enlarged regions each defined by two first patterns of the plurality of first patterns and a second pattern of the plurality of second patterns, and the two first patterns being vertically adjacent to each other and the second pattern being disposed between the two first patterns; a channel structure including a body portion penetrating the stack structure and a plurality of protrusion portions extending from the body portion toward the enlarged regions; and a data storage layer disposed between the stack structure and the channel structure, wherein sidewalls of the protrusion portions of the channel structure are disposed between a sidewall of the body portion of the channel structure and sidewalls of the first patterns of the stack structure, in a plan view.