Nonvolatile memory device and method for fabricating the same

摘要

A nonvolatile memory device includes a substrate having active regions that are defined by an isolation layer and that have first sidewalls extending upward from the isolation layer, floating gates adjoining the first sidewalls of the active regions with a tunnel dielectric layer interposed between the active regions and the floating gates and extending upward from the substrate, an intergate dielectric layer disposed over the floating gates, and control gates disposed over the intergate dielectric layer.

主权项

1. A method for fabricating a nonvolatile memory device, comprising:
providing a substrate that defines active regions and isolation regions; forming an isolation layer in the isolation regions such that the active regions have first sidewalls and second sidewalls which are opposite to the first sidewalls, and portions of the first sidewalls of the active regions towers above the isolation layer; forming floating gates having first portions that face the portions of the first sidewalls of the active regions and second portions towering above the active regions, wherein the floating gates do not face the second sidewalls of the active regions; forming a tunnel dielectric layer interposed between the floating gates and the active regions; forming an intergate dielectric layer over the floating gates; and forming a control gate over the intergate dielectric layer.