主权项 |
1. A method comprising:
a) providing gaseous precursors of polycrystalline monolithic magnesium aluminate in a chemical vapor deposition chamber, wherein a source of magnesium is chosen from magnesium halides and a source of aluminum is chosen from aluminum halides, aluminum carbonyls and aluminum acetonates and a source of oxygen is chosen from O2, CO2, NO2, H2O2, O3, N2O and H2O; b) reacting the gaseous precursors in the chemical vapor deposition chamber; and c) chemical vapor depositing polycrystalline monolithic magnesium aluminate on a substrate in the chemical vapor deposition chamber at a deposition rate of 0.1 μm/minute to 5 μm/minute, the temperature of the substrate is 700° C. to 1400° C. |