| 摘要 |
一种可降低晶圆坏率的晶块切割方法，其包含：在一晶块之至少一表面形成一奈米结构层；在该奈米结构层上沉积或涂布一缓冲层；在该缓冲层和一固定板之间施加一层树脂以使该晶块固定在该固定板上；对该晶块执行一切割程序以获得复数片晶圆；以及对所述复数片晶圆执行一树脂去除程序。; depositing a buffer layer on the layer of nanostructures; fixing the ingot to a mounting plate by applying a layer of epoxy between the buffer layer and the mounting plate; performing a dicing process on the ingot to get a plurality of wafers; and performing an epoxy removal process on the plurality of wafers. |
