| 发明名称 | Method and apparatus for plasma dicing a semi-conductor wafer | ||
| 摘要 | The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | ||
| 申请公布号 | US9202720(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201313764177 | 申请日期 | 2013.02.11 |
| 申请人 | Plasma-Therm LLC | 发明人 | Martinez Linnell;Pays-Volard David;Johnson Chris;Johnson David;Westerman Russell;Grivna Gordon M. |
| 分类号 | H01L21/00;H01L21/302;H01L21/461;H01L21/67;H01L21/3065;H01L21/683;H01L21/687;H01L21/78;H01L21/782;H01J37/32;H01L21/311;H01L21/677 | 主分类号 | H01L21/00 |
| 代理机构 | Burr & Forman LLP | 代理人 | Burr & Forman LLP ;Kauget Harvey S. |
| 主权项 | 1. A method for plasma dicing a substrate, the method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a lifting mechanism within the process chamber; providing a work piece support within the process chamber, the work piece support having an electrostatic chuck, the electrostatic chuck having an outer diameter, said outer diameter of the electrostatic chuck extending to the lifting mechanism; placing the substrate onto a support film on a frame to form a work piece; placing the work piece onto the lifting mechanism in the process chamber; generating a plasma through the plasma source; etching the work piece using the generated plasma; and electrostatically clamping a portion of the support film using said electrostatic chuck during the etching step. | ||
| 地址 | St. Petersburg FL US | ||