发明名称 On-line memory testing systems and methods
摘要 A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory has a fault.
申请公布号 US9202591(B2) 申请公布日期 2015.12.01
申请号 US201313892019 申请日期 2013.05.10
申请人 OmniVision Technologies, Inc. 发明人 Solhusvik Johannes;Koch Kristoffer Ellersgaard;Yaghmai Sohrab;Picalausa Jenny
分类号 G01R31/28;G11C29/08;G11C29/04;G11C29/26 主分类号 G01R31/28
代理机构 Lathrop & Gage LLP 代理人 Lathrop & Gage LLP
主权项 1. A method for testing an electronic memory while the electronic memory is in use, comprising: initializing a write error detection code in response to a write access to the electronic memory at a location at a beginning address of an address range under test; initializing a read error detection code in response to a read access to the electronic memory at the location at the beginning address of the address range under test; updating the write error detection code in response to each write access to the electronic memory at a location within the address range under test, such that a final value of the write error detection code is a cyclic redundancy check (CRC) value of data written to the electronic memory at each location within the address range under test; updating the read error detection code in response to each read access to the electronic memory at a location within the address range under test, such that a final value of the read error detection code is a CRC value of data read from the electronic memory at each location within the address range under test; comparing the final value of the write error detection code to the final value of the read error detection code to determine if the electronic memory has a fault; and generating an error signal if the electronic memory has a fault.
地址 Santa Clara CA US