Resist composition and patterning process

摘要

An additive polymer comprising recurring units derived from a fluorosulfonamide-substituted styrene and recurring units derived from a stilbene, styrylnaphthalene, dinaphthylethylene, acenaphthylene, indene, benzofuran, or benzothiophene derivative is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development.

主权项

1. A resist composition comprising a polymer capable of increasing alkali solubility under the action of acid as base resin, and a polymer having the general formula (1) as polymeric additive,wherein R1 is a single bond or a straight or branched C1-C4 alkylene, R2 is fluorine, or a straight, branched or cyclic C1-C6 alkyl, phenyl or alkyl-substituted phenyl group which contains at least one fluorine atom, R3 and R4 are each independently selected from the group consisting of hydrogen, hydroxyl, straight, branched or cyclic C1-C10 alkyl, alkoxy, acyloxy, C2-C6 alkenyl, C6-C10 aryl, cyano, nitro, amino and halogen, X1 and X2 each are phenylene or naphthylene, m is 1 or 2, R5 and R6 are each independently selected from the group consisting of hydrogen, halogen, straight or branched C1-C4 alkyl, alkoxy, acyloxy, hydroxyl, carboxyl, and alkoxycarbonyl, M is methylene, oxygen atom or sulfur atom,
p, q-1, q-2 and q-3 are numbers in the range: 0