| 发明名称 | Nonvolatile memory device, memory system comprising same, and method of programming same | ||
| 摘要 | A method of programming a nonvolatile memory device comprises performing an N-th program loop based on state data stored in data latches according to a default state ordering, determining whether conversion of the default state ordering is required according to a predetermined criterion, as a consequence of determining that conversion of the default state ordering is required, converting all or part of the state data stored in the data latches from the default state ordering to another state ordering, and performing a (N+1)th program loop based on the converted state data. | ||
| 申请公布号 | US9202587(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201414278743 | 申请日期 | 2014.05.15 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Jo Jonghoo;Yoon Hyun Jun;Park Kitae;Shim Dongkyo |
| 分类号 | G11C11/34;G11C16/34;G11C16/10;G11C16/04;G11C16/08 | 主分类号 | G11C11/34 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A method of programming a nonvolatile memory device, comprising: performing an N-th program loop based on state data stored in data latches according to a default state ordering; determining whether conversion of the default state ordering is required according to a predetermined criterion; as a consequence of determining that conversion of the default state ordering is required, converting all or part of the state data stored in the data latches from the default state ordering to another state ordering; and performing a (N+1)th program loop based on the converted state data. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||