发明名称 Articles including anticondensation and/or low-E coatings and/or methods of making the same
摘要 Certain example embodiments of this invention relate to articles including anticondensation and/or low-E coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation and/or low-E coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.
申请公布号 US9199875(B2) 申请公布日期 2015.12.01
申请号 US201414458280 申请日期 2014.08.13
申请人 Guardian Industries Corp.;Centre Luxembourg de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.) 发明人 Lemmer Jean-Marc;Murphy Nestor P.;McLean David D.;Blacker Richard;Lage Herbert;Ferreira Jose;Pallotta Pierre
分类号 C03C17/36;C03C17/34;E06B3/66;F25D23/02;E04D13/03 主分类号 C03C17/36
代理机构 Nixon & Vanderhye P.C. 代理人 Nixon & Vanderhye P.C.
主权项 1. An insulating glass (IG) window unit, comprising: first and second substantially parallel spaced apart glass substrates, the first and second glass substrates providing, in order, first through fourth substantially parallel major surfaces of the IG window unit, a gap being defined between the first and second substrates; wherein the first glass substrate of the IG window unit supports a first low-E coating comprising a plurality of thin film layers including, in order moving away from the first substrate: (a) a first dielectric layer comprising silicon,(b) a layer comprising indium-tin-oxide (ITO) and having an index of refraction of 1.7-2.1 and being 75-175 nm thick,(c) a second dielectric layer comprising silicon nitride, wherein the second dielectric layer comprising silicon nitride is located over and directly contacting the layer comprising indium-tin-oxide so that the layer comprising indium-tin-oxide is located between the first glass substrate and the second dielectric layer comprising silicon nitride, and(d) a protective layer comprising oxygen and aluminum, the protective layer comprising oxygen and aluminum being located over and directly contacting the second dielectric layer comprising silicon nitride; wherein the protective layer comprising oxygen and aluminum is the outermost layer of the coating and is to be exposed to an external environment adjacent the IG window unit; and wherein the coating has a hemispherical emissivity of less than 0.23 and a sheet resistance of less than 30 ohms/square.
地址 Auburn Hills MI US