氮化物半导体结构及半导体发光元件;NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

本发明系有关于一种氮化物半导体结构及半导体发光元件，系主要于发光层与n型半导体层间配置有一次微米等级厚度之应力释放层，该应力释放层系以不超过8对彼此交替堆叠之InxGa1-xN层及InyGa1-yN层所构成，其中x及y系满足0<x<1、0<y<1、x<y之数值；藉此，具较少堆叠层数的应力释放层能有效地减小因晶格不匹配所产生之残余应力与磊晶缺陷，且具次微米厚度(较佳为0.1~0.5微米之间)之应力释放层更使得于磊晶过程中，精确地控制组成比例，以有效地掌控发光二极体的品质。;x<1, 0<y<1 and 0<x+y<1. Accordingly, residual stress and epitaxial defects caused from the lattice mismatching can be efficiently reduced by the stress release layer with fewer stacked layers. Furthermore, the composition ratio of the stress release layer with the sub-micronmicron thickness (preferably between 0.1 to 0.5 microns) can be controlled more accuratelyduring the epitaxial process, so as to control the quality of the light emitting diodesefficiently.