磊晶晶圆、半导体发光元件、发光装置及磊晶晶圆之制造方法;EPITAXIAL WAFER, SEMICONDUCTOR LIGHT EMISSION ELEMENT, LIGHT EMISSION DEVICE AND MANUFACTURING METHOD OF EPITAXIAL WAFER

摘要

本发明提供可大幅提升发光输出之磊晶晶圆。本发明之磊晶晶圆系具备有：将相对于m面而具有0°以上且30°以下之偏角的面当作主表面的GaN基板；形成在上述GaN基板之一侧之主表面上的n型导电层；及形成在上述n型导电层之一侧之主表面上的发光层；上述发光层之PL波峰波长系在410nm以上且460nm以下；上述发光层之PL半值宽度系满足条件式(1)。;△l≦L×0.4-150 (1);L：PL波峰波长(单位：nm)；△l：PL半值宽度(单位：nm) Provided is an epitaxial wafer that can substantially improve light emission output. The epitaxial wafer of the present invention comprises a GaN substrate having a surface at an off angle that is 0 degrees or greater and 30 degrees or less with respect to an m-plane as a major surface, an n-type conductive layer formed on the major surface on one side of the GaN substrate, and a light emission layer formed on the major surface on one side of the n-type conductive layer, wherein a PL peak wavelength of the light emission layer is 410 nm or greater and 460 nm or less, and a PL FWHM (Full Width at Half Maximum) of the light emission layer satisfies conditional formula (1). ;△l≦L×0.4-150 (1) ;L: PL peak wavelength (unit: nm) △l: PL FWHM (unit: nm)