发明名称 Vertical light emitting diode with photonic nanostructures and method of fabrication thereof
摘要 There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles.
申请公布号 US9202979(B2) 申请公布日期 2015.12.01
申请号 US201314141549 申请日期 2013.12.27
申请人 Agency for Science, Technology and Research 发明人 Krishnamoorthy Sivashankar;Manippady Krishna Kumar;Bin Dolmanan Surani;Lin Kaixin Vivian;Teo Siew Lang;Tripathy Sudhiranjan
分类号 H01L21/00;H01L33/32;H01L33/00;H01L33/10 主分类号 H01L21/00
代理机构 Winstead, P.C. 代理人 Winstead, P.C.
主权项 1. A method of fabricating a vertical light emitting diode comprising: forming a light emitting diode structure including: forming a first material layer of a first conductivity type;forming a second material layer of a second conductivity type;forming a light emitting layer between the first material layer and the second material layer; andforming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode, wherein said forming a plurality of generally ordered photonic nanostructures comprises forming a self-assembled template comprising generally ordered nanoparticles on said surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer.
地址 Singapore SG