Semiconductor devices having blocking layers and methods of forming the same

摘要

A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.

主权项

1. A semiconductor device, comprising:
a substrate having first conductivity-type impurities; a lower interconnection on the substrate and having second conductivity-type impurities; a switching device on the lower interconnection; a semiconductor blocking layer between the substrate and the lower interconnection, the semiconductor blocking layer having the same horizontal width as the lower interconnection; and an additional blocking layer that includes carbon (C) and/or germanium (Ge) between the lower interconnection and the switching device, wherein the semiconductor blocking layer comprises: a lower blocking layer in contact with an active region in the substrate and having the first conductivity-type impurities; and an upper blocking layer in contact with the lower interconnection and having the second conductivity-type impurities, and wherein the additional blocking layer comprises a lower additional blocking layer in contact with the lower interconnection; and an upper additional blocking layer in contact with the lower additional blocking layer, wherein a width of the lower additional blocking layer exceeds a width of the upper additional blocking layer, wherein the semiconductor blocking layer comprises a silicon layer that is doped with first conductivity-type impurities and carbon (C), germanium (Ge), or a combination thereof.