| 发明名称 | Abrupt source/drain junction formation using a diffusion facilitation layer | ||
| 摘要 | A method of forming a field effect transistor (FET) device includes forming a diffusion facilitation layer on top of a semiconductor substrate; forming a doped, raised source/drain (RSD) layer on the diffusion facilitation layer; removing a portion of the diffusion facilitation layer, corresponding to a region directly above a channel region of the FET device; and performing an anneal so as to define abrupt source and drain junctions in the semiconductor substrate, wherein dopant atoms from the doped RSD layer diffuse within the diffusion facilitation layer at a faster rate than with respect to the semiconductor substrate. | ||
| 申请公布号 | US9202812(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201414221482 | 申请日期 | 2014.03.21 |
| 申请人 | International Business Machines Corporation | 发明人 | Cheng Kangguo;Doris Bruce B.;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 | H01L21/00;H01L21/84;H01L27/092;H01L29/165;H01L29/167;H01L29/161;H01L29/08;H01L29/417;H01L21/324;H01L21/225;H01L29/66;H01L21/8238 | 主分类号 | H01L21/00 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of forming a field effect transistor (FET) device, the method comprising: forming a diffusion facilitation layer on top of a semiconductor substrate; forming a doped, raised source/drain (RSD) layer on the diffusion facilitation layer; removing a portion of the diffusion facilitation layer, corresponding to a region directly above a channel region of the FET device; and performing an anneal so as to define abrupt source and drain junctions in the semiconductor substrate, wherein dopant atoms from the doped RSD layer diffuse within the diffusion facilitation layer at a faster rate than with respect to the semiconductor substrate. | ||
| 地址 | Armonk NY US | ||