| 发明名称 | Semiconductor apparatus having through via capable of testing connectivity of through via | ||
| 摘要 | A semiconductor apparatus with a through via includes a semiconductor chip and a through via formed by penetrating through the semiconductor chip. The system further includes a first metal layer connected to a portion of the through via at an end of the through via and a second metal layer connected to another portion of the through via at the end of the through via. | ||
| 申请公布号 | US9202802(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201414189083 | 申请日期 | 2014.02.25 |
| 申请人 | SK Hynix Inc. | 发明人 | Park Heat Bit;Lee Jong Chern;Kim Hong Gyeom |
| 分类号 | H01L23/48;H01L25/065 | 主分类号 | H01L23/48 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor apparatus comprising: a semiconductor chip; a through via formed by penetrating through the semiconductor chip; a first metal layer coupled to a portion of the through via at an end of the through via; and a second metal layer coupled to another portion of the through via at the end of the through via. | ||
| 地址 | Gyeonggi-do KR | ||