Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use

摘要

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

主权项

1. A chemical-mechanical planarization composition comprising: A) an abrasive; B) about 0.1% to about 8% by weight of a per-type oxidizing compound; C) benzenesulfonic acid and/or a salt thereof; D) a corrosion inhibitor; and (E) water; wherein the composition has a pH ranging from about 5 to 11, and wherein the composition is substantially free of an amino acid having two or more nitrogen atoms,
wherein said corrosion inhibitor is selected from the group consisting of 1,2,4-triazole, benzotriazole, 6-tolylytriazole, tolyltriazole derivatives, 1-(2,3-dicarboxypropyl)benzotriazole, branched-alkylphenolsubstituted-benzotriazoles, N-acyl-N-hydrocarbonoxylalkyl aspartic acid, and mixtures thereof.