发明名称 |
Method and system for non-destructive distribution profiling of an element in a film |
摘要 |
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra. |
申请公布号 |
US9201030(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201414542175 |
申请日期 |
2014.11.14 |
申请人 |
ReVera, Incorporated |
发明人 |
deCecco Paola;Schueler Bruno;Reed David;Kwan Michael;Ballance David Stephen |
分类号 |
H01J37/26;G01N23/227;H03F1/26 |
主分类号 |
H01J37/26 |
代理机构 |
Blakely Sokoloff Taylor Zafman LLP |
代理人 |
Blakely Sokoloff Taylor Zafman LLP |
主权项 |
1. A method comprising:
computing a set of statistical coefficients characteristic of a set of spectra, said set of statistical coefficients organized in a database as a function of selected parameters that define a reference film; simulating a background spectrum for a sample film using said database and a known parameter for said sample film; and subtracting said background spectrum from a measured spectrum for said sample film to generate a processed spectrum for said sample film. |
地址 |
Santa Clara CA US |