发明名称 Method and system for non-destructive distribution profiling of an element in a film
摘要 A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
申请公布号 US9201030(B2) 申请公布日期 2015.12.01
申请号 US201414542175 申请日期 2014.11.14
申请人 ReVera, Incorporated 发明人 deCecco Paola;Schueler Bruno;Reed David;Kwan Michael;Ballance David Stephen
分类号 H01J37/26;G01N23/227;H03F1/26 主分类号 H01J37/26
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method comprising: computing a set of statistical coefficients characteristic of a set of spectra, said set of statistical coefficients organized in a database as a function of selected parameters that define a reference film; simulating a background spectrum for a sample film using said database and a known parameter for said sample film; and subtracting said background spectrum from a measured spectrum for said sample film to generate a processed spectrum for said sample film.
地址 Santa Clara CA US