Magnetic memory devices having junction magnetic layers and buffer layers and related methods

摘要

A magnetic memory device may include a free magnetic structure, a tunnel barrier layer, and a pinned magnetic structure wherein the tunnel barrier layer is between the free magnetic structure and the pinned magnetic structure. The pinned magnetic structure may include first and second pinned layers and an exchange coupling layer between the first and second pinned layers. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the second pinned layer may include a junction magnetic layer and a buffer layer between the junction magnetic layer and the exchange coupling layer. The buffer layer may include a layer of a material including a non-magnetic metallic element. Related devices, structures, and methods are also discussed.

主权项

1. A magnetic memory device comprising:
a free magnetic structure; a tunnel barrier layer; and a pinned magnetic structure wherein the tunnel barrier layer is between the free magnetic structure and the pinned magnetic structure, wherein the pinned magnetic structure includes first and second pinned layers and an exchange coupling layer between the first and second pinned layers, wherein the second pinned layer is between the first pinned layer and the tunnel barrier layer, wherein the second pinned layer includes a junction magnetic layer and a buffer layer between the junction magnetic layer and the exchange coupling layer, and wherein the buffer layer comprises a layer of a material including a non-magnetic metallic element, wherein the junction magnetic layer and the buffer layer have different crystallization characteristics, and wherein a degree of crystallinity of the junction magnetic layer is higher than a degree of crystallinity of the buffer layer.