| 发明名称 | Light emitting device and its method of manufacture | ||
| 摘要 | The light emitting device is provided with a substrate, semiconductor light emitting elements mounted on the substrate, a mold frame that surrounds the periphery of the light emitting elements on the substrate, and resin layers that fill the inside of the mold frame. The mold frame includes a first mold frame, and a second mold frame formed on top of the first mold frame. The resin layers include a first resin layer that embeds the light emitting elements in resin and is formed with a height approximately equal to the height of the top of the first mold frame, and a second resin layer on top of the first resin layer that is formed with a height approximately equal to the height of the top of the second mold frame. At least one of the resin layers (which are the first resin layer and the second resin layer) includes wavelength-shifting material to change the wavelength of light emitted from the semiconductor light emitting elements. | ||
| 申请公布号 | US9202999(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201414158260 | 申请日期 | 2014.01.17 |
| 申请人 | NICHIA CORPORATION | 发明人 | Kawano Yusuke;Okada Satoshi |
| 分类号 | H01L33/00;H01L33/58;H01L33/48;H01L33/56;H01L33/50 | 主分类号 | H01L33/00 |
| 代理机构 | Mori & Ward, LLP | 代理人 | Mori & Ward, LLP |
| 主权项 | 1. A light emitting device comprising: a substrate; semiconductor light emitting elements mounted on the substrate; a mold frame that surrounds the periphery of the light emitting elements on the substrate; and resin layers that fill the inside of the mold frame, wherein the mold frame includes a first mold frame, and a second mold frame formed on top of the first mold frame, wherein the resin layers comprises: a first resin layer that embeds the light emitting elements in resin and is formed with a height approximately equal to the height of the to of the first mold frame; anda second resin layer formed on top of the first resin layer with a height approximately equal to the height of the top of the second mold frame, wherein wavelength-shifting material to change the wavelength of light emitted from the semiconductor light emitting elements is included in at least one of the resin layers, which are the first resin layer and the second resin layer, and wherein part of the second mold frame covers a portion of an upper surface of the edge of the first resin layer. | ||
| 地址 | Anan-shi JP | ||