发明名称 Light emitting diode
摘要 A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped.
申请公布号 US9202977(B2) 申请公布日期 2015.12.01
申请号 US201414542645 申请日期 2014.11.16
申请人 Tsinghua University;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 Zhu Zhen-Dong;Li Qun-Qing;Zhang Li-Hui;Chen Mo;Fan Shou-Shan
分类号 H01L29/06;H01L33/24;H01L33/06;H01L33/22;H01L33/20 主分类号 H01L29/06
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. A light emitting diode, comprising: a substrate; a first semiconductor layer comprising a first surface contacting the substrate and a second surface opposite to the first surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer and comprising a light emitting surface away from the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; wherein a plurality of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer, a plurality of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, wherein each of the plurality of first three-dimensional nano-structures and the plurality of second three-dimensional nano-structures comprises a first peak and a second peak, a first groove is defined between the first peak and the second peak, a second groove is defined between adjacent two of the plurality of first three-dimensional nano-structures and adjacent two of the plurality of second three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove.
地址 Beijing CN