发明名称 |
Thin film semiconductor device and manufacturing method therefor |
摘要 |
A thin film semiconductor device comprises a substrate, a gate electrode disposed above the substrate, an oxide semiconductor layer disposed above the substrate so as to oppose the gate electrode, a channel protective layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode each connected to the oxide semiconductor layer. The density of states DOS [eV−1cm−3] of oxygen defects in the oxide semiconductor layer satisfies the following relationship:
DOS≦1.710×1017×(Ec−E)2−6.468×1017×(Ec−E)+6.113×1017
provided that 2.0 eV≦Ec−E≦2.7 eV
where Ec [eV] is an energy level of a conduction band edge of the oxide semiconductor layer and E [eV] is a predetermined energy level of the oxide semiconductor layer. |
申请公布号 |
US9202928(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201414480958 |
申请日期 |
2014.09.09 |
申请人 |
JOLED INC. |
发明人 |
Hayashi Hiroshi;Izumi Tomoaki;Nonoguchi Mami;Yoshitani Toshiaki |
分类号 |
H01L21/26;H01L29/786;H01L21/02 |
主分类号 |
H01L21/26 |
代理机构 |
Greenblum & Bernstein, P.L.C. |
代理人 |
Greenblum & Bernstein, P.L.C. |
主权项 |
1. A thin film semiconductor device comprising:
a substrate; a gate electrode disposed above the substrate; an oxide semiconductor layer disposed above the substrate so as to oppose the gate electrode; a first insulating layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein a density of states DOS [eV−1cm−2] of oxygen defects in the oxide semiconductor layer satisfies the following relationship:
DOS≦1.710×1017×(Ec−E)2−6.468×1017×(Ec−E)+6.113×1017 provided that 2.0 eV≦Ec−E≦2.7 eVwhere Ec [eV] is an energy level of a conduction band edge of the oxide semiconductor layer and E [eV] is a predetermined energy level of the oxide semiconductor layer. |
地址 |
Tokyo JP |