Power device chip and method of manufacturing the power device chip

摘要

According to example embodiments, a power device chip includes a plurality of unit power devices classified into a plurality of sectors, a first pad and a second pad. At least one of the first and second pads is divided into a number of pad parts equal to a number of the plurality of sectors. The first pad is connected to first electrodes of the plurality of unit power devices, and the second pad is connected to second electrodes of the plurality of unit power devices. The unit power devices may be diodes. The power device chip may further include third electrodes in the plurality of unit power devices, and a third pad may be connected to the third electrodes. In this case, the unit power devices may be high electron mobility transistors (HEMTs). Pad parts connected to defective sectors may be excluded from bonding.

主权项

1. A power device chip comprising:
a plurality of unit power devices classified into a plurality of sectors; a first pad divided into first pad parts; and a second pad divided into second pad parts,
a number of the first pad parts being equal to a number of the plurality of sectors,a number of the second pad parts being equal to the number of the plurality of sectors, the first pad parts being connected to first electrodes of the plurality of unit power devices, the second pad parts being connected to second electrodes of the plurality of unit power devices, and
a number of the first electrodes electrically connected to a corresponding one of the first pad parts is equal to a number of the second electrodes connected to a corresponding one of the second pad parts, wherein the plurality of unit power devices share an active region in common, and each one of the sectors is defined by a portion of the active region that is between only one of the first pad parts and only one of the second pad parts.