TFT, method of manufacturing the TFT, and method of manufacturing organic light emitting display device including the TFT

摘要

A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region.

主权项

1. A method of manufacturing a thin film transistor (TFT), comprising:
forming an oxide semiconductor layer on a substrate; forming an oxide semiconductor pattern by using a first photosensitive pattern as a mask, the oxide semiconductor pattern includes a first region, a second region and a third region; directly plasma processing the first region and the second region of the oxide semiconductor pattern by using a second photosensitive pattern as a mask; removing the second photosensitive pattern; forming an insulating pattern on the substrate to cover the oxide semiconductor pattern after said direct plasma processing; forming a gate electrode on the insulating pattern to overlap with the third region; and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, wherein the second region is disposed between the first region and the third region.