Temperature control for GaN based materials

摘要

A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

主权项

1. A method of in-situ temperature measurement for a wafer treatment reactor, comprising:
(a) heating the reactor until the reactor reaches a wafer treatment temperature; (b) rotating a wafer support element within the reactor about a rotational axis; (c) while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element; and (d) while the wafer support element is rotating about the rotational axis, obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position, wherein the first operating pyrometer is sensitive to radiation in a first wavelength band, the wafer temperature measurement device is sensitive to radiation in a second wavelength band, and the at least one wafer is translucent or transparent to radiation in the first band and opaque to radiation in the second band.