SEMICONDUCTOR DEVICE HAVING PROTECTION PATTERN AND METHOD OF FORMING THE SAME

摘要

The present invention relates to a semiconductor device including a galvanic corrosion preventing pattern. A substrate with a keep out zone (KOZ) is arranged. A plurality of wires are formed out of the KOZ on the substrate. A through silicon via (TSV) is formed in the KOZ and passes through the substrate. Arranged is a protection pattern which is electrically insulated from the TSV, is formed in the KOZ, and has a conductive material which is different from the material of the TSV. The lower side of the protection pattern is formed on a level which is higher than the lower side of the TSV.