THE METHOD OF PRODUCING THE DIAMOND-SIC COMPOSITE BY USING HOT ISOSTATIC PRESSING EQUIPMENT

摘要

The present invention relates to a method for synthesizing diamond by hot isostatic sintering, and more specifically, to a method for synthesizing a diamond-SiC composite which converts the entire quantity of contained silicon into SiC, and sintering diamond with the generated SiC to integrate the same by mixing a diamond powder with an Si powder, and heating and pressing the mixed powders in a hot isostatic sintering device. To this end, the method for synthesizing a diamond-SiC composite which converts the entire quantity of contained silicon into SiC comprises the following steps: mixing 8 to 16 μm of a diamond powder, 75 to 120 μm of a diamond powder, an Si powder at a weight ratio of 2:2:1; maintaining the mixed powders in a hot isostatic molding device for 20 minutes at temperatures ranging from 800 to 900°C and pressures ranging from 110 to 120 MPa, which is a thermodynamic metastable region of diamond, at a temperature increase rate ranging from 10 to 12°C; increasing a temperature of the mixed powders to temperatures ranging from 1450 to 1500°C which is a thermodynamic metastable region of diamond, at a temperature increase rate ranging from 10 to 12°C; and cooling the mixed powders to a temperature of 500°C at a temperature increase rate of 18 to 20°C after maintaining the mixed powders in the hot isostatic molding device for 15 minutes at pressures ranging from 190 to 200 MPa.