| 摘要 |
A semiconductor device is disclosed which includes: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands. For instance, a photodetector (500) includes a photon absorbing layer (PAL), a barrier layer (BL), an in-situ passsivating structure (ISPS) and metal contacts (MC) electrically coupled to the barrier layer at exposed regions at which said passivation structure is absent. The absorbing layer and the barrier layer may be III-V superlattices. |
