发明名称 BISMUTH-DOPED THERMOELECTRIC SOLID SOLUTION MATERIALS AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention relates to a bismuth-doped thermoelectric solid solution material and a method for manufacturing the same and, more specifically to a bismuth-doped thermoelectric solid solution material capable of improving thermoelectric performance, and a method for manufacturing the same. By applying a method of performing a solid state reaction after mixing raw material powder, a solid thermoelectric solution can be naturally manufactured, so the thermoelectric performance can be remarkably improved. In addition, since the thermoelectric solid solution material can be manufactured only by a process of mixing the raw powder and having the mixture react in a solid state, the thermoelectric material having improved performance can be manufactured at a low cost. In addition, by doping Bi on the solid solution thermoelectric material, the conductivity and Seebeck coefficient can be optimized.
申请公布号 KR20150133041(A) 申请公布日期 2015.11.27
申请号 KR20140059869 申请日期 2014.05.19
申请人 KOREA NATIONAL UNIVERSITY OF TRANSPORTATION INDUSTRY-ACADEMIC COOPERATION FOUNDATION 发明人 KIM, IL HO;YOU, SIN WOOK;SHIN, DONG KIL
分类号 H01L35/18;H01L35/34 主分类号 H01L35/18
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