发明名称 |
METHOD AND APPARATUS FOR UNIFORMLY METALLIZATION ON SUBSTRATE |
摘要 |
The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate. |
申请公布号 |
SG11201507894X(A) |
申请公布日期 |
2015.11.27 |
申请号 |
SGX11201507894 |
申请日期 |
2013.04.22 |
申请人 |
ACM RESEARCH (SHANGHAI) INC. |
发明人 |
WANG, HUI;CHEN, FUPING;WANG, XI |
分类号 |
H01L21/607;C25D5/20 |
主分类号 |
H01L21/607 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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